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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1376 DESCRIPTION *With TO-126 package *DARLINGTON *Complement to type 2SB1012 APPLICATIONS *For low frequency power amplifier applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 120 7 1.5 3.0 20 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEO ICBO hFE VD ton toff PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage Turn-on time IC=1A ;IB1=-IB2=1mA Turn-off time 2.0 CONDITIONS IC=10mA; RBE= IE=50mA ;IC=0 IC=1.0A ;IB=1mA IC=1.5A ;IB=1.5mA IC=1.0A ;IB=1mA IC=1.5A ;IB=1.5mA VCE=100V; RBE= VCB=120V; IE=0 IC=1A ; VCE=3V ID=1.5A 0.5 2000 MIN 120 7 2SD1376 TYP. MAX UNIT V V 1.5 2.0 2.0 2.5 10 100 30000 3.0 V V V V A A V s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1376 Fig.2 Outline dimensions 3 |
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